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Ratings Contact This website is not endorsed by or affiliated with Electronic Arts, Inc. or Sony Computer Entertainment America LLC. Nintendo and its trademark are registered. You can verify that by viewing. This website contains links and advertisements to other sites,. You should not assume that these other websites.Conventionally, in the manufacture of semiconductor devices, metal materials are used for wiring that connects the semiconductor integrated circuits to each other. In recent years, copper (Cu) wiring has become the mainstream, instead of conventional aluminum wiring, from the viewpoint of the fact that Cu wiring has higher electrical conductivity and higher reliability than the wiring formed with Al. However, Cu is chemically active, so that, if Cu wiring is directly exposed to oxygen or water, the wiring will be easily corroded and, thus, will lose its electrical conductivity. Accordingly, as a method for forming Cu wiring, a method is widely adopted in which the Cu wiring is formed on an insulating layer of SiO2 or the like and Cu wiring is covered with a barrier metal. On the other hand, in recent years, as semiconductor devices have been becoming more integrated, the size of contact holes has also been becoming smaller, and the aspect ratio (ratio of the depth to the diameter of the hole) of the contact holes has been increasing. As a result, in the dry etching method for contact holes in which such semiconductor devices are manufactured, the aspect ratio of the contact holes has been becoming larger. Accordingly, in the case where the mask used in the dry etching is made of silicon nitride (SiN) or the like, the mask is sometimes damaged by etching. In this event, the etching characteristics of the mask are deteriorated, and the manufactured semiconductor devices will have insufficient performance. As a method to solve such problems, a technique is proposed in which the surface of a mask used in dry etching is covered with an anti-oxidizing film, and in which, in the dry etching step, the mask having the anti-oxidizing film is used. As the anti-oxidizing film, a film of silicon carbide (SiC) or the like is used. By forming the anti-oxidizing film, oxidation of the mask surface during etching is suppressed, and the surface of the mask can be prevented from becoming rough. FIG. 17 is a schematic cross-sectional view of a semiconductor device fabricated by applying the anti 6d1f23a050

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